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MJD29/29C
MJD29/29C
General Purpose Amplifier Low Speed Switching Applications
* Load Formed for Surface Mount Application (No Suffix) * Straight Lead (I-PAK, "- I" Suffix) * Electrically Similar to Popular TIP29 and TIP29C
1
D-PAK 1.Base
1
I-PAK 3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : MJD29 : MJD29C VCEO Collector-Emitter Voltage : MJD29 : MJD29C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) TJ TSTG Junction Temperature Storage Temperature 40 100 40 100 5 1 3 0.4 15 1.56 150 - 65 ~ 150 V V V V V A A A W W C C Value Units
VEBO IC ICP IB PC
Electrical Characteristics TC=25C unless otherwise noted
Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : MJD29 : MJD29C Collector Cut-off Current : MJD29 : MJD29C ICES Collector Cut-off Current : MJD29 : MJD29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4A, IC = 1A VCE = 10V, IC = 200mA 3 40 15 20 20 1 75 0.7 1.3 V V MHz A A mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 A A Test Condition IC = 30mA, IB = 0 Min. 40 100 Max. Units V V
ICEO
* Pulse Test: PW 300s, Duty Cycle 2%
(c)2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD29/29C
Typical Characteristics
1000
10
VCE = 2V
IC=10IB
tF, tSTG,[s],TURN OFF TIME
hFE, DC CURRENT GAIN
tSTG
1
100
tF, VCC=30V
tF, VCC=10V
0.1
10
1 0.01
0.1
1
10
0.01 0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Turn On Time
10
100
IC=10IB
IC[A], COLLECTOR CURRENT
tR, tD[s],TURN ON TIME
10
1
tR, VCC=30V
10
1
1m
DC
50
0 s
s
0 s
tR, VCC=10V
0.1
tD, VBE(off)=2V
0.1
0.01 0.01
0.01 0.1 1 10 1 10 100 1000
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Turn Off Time
Figure 4. Safe Operating Area
20
PC[W], POWER DISSIPATION
15
10
5
0 0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
(c)2001 Fairchild Semiconductor Corporation
MJD29C
MJD29
Rev. A2, June 2001
MJD29/29C
Package Demensions
D-PAK
6.60 0.20 5.34 0.30 (0.50) (4.34) (0.50)
0.70 0.20
2.30 0.10 0.50 0.10
0.60 0.20
6.10 0.20
2.70 0.20
9.50 0.30
0.91 0.10
0.80 0.20
MAX0.96 2.30TYP [2.300.20]
0.76 0.10 2.30TYP [2.300.20]
0.89 0.10
0.50 0.10 1.02 0.20 2.30 0.20
(0.70)
(0.90) (0.10) (3.05)
6.10 0.20
9.50 0.30
2.70 0.20
(2XR0.25)
0.76 0.10
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
(1.00)
6.60 0.20 (5.34) (5.04) (1.50)
MIN0.55
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3

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